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TSM1N45
450V N-Channel Power MOSFET
TO-92
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
450
RDS(on)()
4.25 @ VGS =10V
ID (A)
0.25
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation mode. There devices are well suited for electronic ballasts base and half bridge configuration.
Features
Low gate charge @ typical 6.5nC Low Crss @ typical 6.5pF Avalanche energy specified Improved dv/dt capability Gate-Source Voltage 30V guaranteed
Block Diagram
Ordering Information
Part No.
TSM1N45CT B0 TSM1N45CT A3
Package
TO-92 TO-92
Packing
1Kpcs / Bulk 2Kpcs / Ammo N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Drain to Source Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation @TC =25C Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM EAS IAR EAR dv/dt PDTOT TJ, TSTG
Limit
450 30 0.5 4 108 0.5 0.25 5.5 2 -55 to +150
Unit
V V A A mJ A mJ V/ns
o
W C
Thermal Performance
Parameter
Thermal Resistance - Junction to Lead Thermal Resistance - Junction to Ambient
Symbol
RJL RJA
Limit
50 140
Unit
o o
C/W C/W
1/8
Version: A09
TSM1N45
450V N-Channel Power MOSFET
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 0.25A VDS = VGS, ID = 250uA VDS = VGS, ID = 250mA VDS = 450V, VGS = 0V VGS = 30V, VDS = 0V VDS = 50V, ID = 0.25A
Symbol
BVDSS RDS(ON) VGS(TH)
Min
450 -2.3 3.2 ----
Typ
-3.7 3.0 4.0 --0.7
Max
-4.25 3.7 4.8 10 100 --
Unit
V V
Zero Gate Voltage Drain Current IDSS uA Gate Body Leakage IGSS nA Forward Transconductance gfs S Dynamic Total Gate Charge Qg -6.5 10 VDS = 360V, ID = 0.5A, nC VGS = 10V Gate-Source Charge Qgs -1.3 -(Note 4,5) Gate-Drain Charge Qgd -3.2 -Input Capacitance Ciss -235 -VDS = 25V, VGS = 0V, pF Output Capacitance Coss -29 -f = 1.0MHz Reverse Transfer Capacitance Crss -6.5 -Switching Turn-On Delay Time td(on) -14.7 -VGS = 25V, ID = 0.5A, Turn-On Rise Time tr -32.8 -VDS = 225V, RG = 25 nS Turn-Off Delay Time td(off) -25.2 -(Note 4,5) Turn-Off Fall Time tf -23.7 -Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS --0.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM --4.0 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 0.5A VSD --1.4 V VGS = 0V, IS = 1A Reverse Recovery Time trr -110 -nS dIF/dt = 100A/S Reverse Recovery Charge Qrr -0.35 -C (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=75mH, IAS=1.6A, VDD=50V, RG=25, Starting TJ=25C 3. ISD 0.5A, di/dt 300A/S, VDD BVDSS, Starting TJ=25C 4. Pulse test: pulse width 300uS. 5. Essentially independent of operating temperature 6. a) Reference point of the is the drain RJL lead b) When mounted on 3"x4.5" FR-4 PCB without any pad copper in a still air environment (RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RCA is determined by the user's board design)
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Version: A09
TSM1N45
450V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: A09
TSM1N45
450V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Version: A09
TSM1N45
450V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
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Version: A09
TSM1N45
450V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
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Version: A09
TSM1N45
450V N-Channel Power MOSFET
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017
Marking Diagram
Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code
7/8
Version: A09
TSM1N45
450V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: A09

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